Crystal IS, Inc. and Asahi Kasei to Jointly Develop Larger Diamter AlN Substrates
Source/Type: News - Staff reports

Author: CompoundSemi News Staff

August 16, 2010... Crystal IS, Inc., of Green Island, New York USA, a developer of UV-C LEDs has signed a joint development agreement with Asahi Kasei Corp., to create a manufacturing process for larger diameter aluminum nitride (AlN) substrates. The substrates will reportedly be based upon Crystal IS technology.

“Aluminum nitride substrates are a critical component in the fabrication of UVC LEDs for energy efficient water and air sterilization applications,” said Dr. Steven Berger CEO of Crystal IS. “Building on our intellectual property to develop manufacturable large diameter substrates is an important step towards high-volume production and long term growth.” Crystal IS notes that the development will take place at its facility in Green Island, NY. Crystal IS says that the program will run in parallel with its UVC LED activities.

“After a comprehensive study, we found Crystal IS wafer technology the most advanced and suitable for commercialization,” said Masafumi Nakao, who heads Asahi Kasei’s development of new business in compound semiconductors. “To reinforce our commitment to Crystal IS and the technology, we are happy to make a $2 million investment in the company as we assess the long-term market potential of these substrates for LEDs and a number of other high-power applications.”

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